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Ordering number : ENA1754A
ATP112
P-Channel Power MOSFET
–60V, –25A, 43m Ω , Single ATPAK
Features
http://onsemi.com
?
?
?
ON-resistance RDS(on)1=33m Ω (typ.)
4V drive
Protection diode in
?
?
Input Capacitance Ciss=1450pF(typ.)
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--60
±20
--25
Unit
V
V
A
Drain Current (PW ≤ 10 μ s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
--75
40
150
--55 to +150
50
--13
A
W
°C
°C
mJ
A
Note : * 1 VDD= -- 10V, L=500 μ H, IAV= -- 13A
* 2 L ≤ 500 μ H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP112-TL-H
Product & Package Information
? Package : ATPAK
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
6.5
1.5
4.6
Packing Type: TL
Marking
2.6
4
0.4
0.4
ATP112
LOT No.
TL
Electrical Connection
1
0.8
2.3
2
2.3
3
0.6
0.55
0.4
1 : Gate
2 : Drain
3 : Source
1
2,4
4 : Drain
Semiconductor Components Industries, LLC, 2013
July, 2013
ATPAK
3
62012 TKIM/72110PA TKIM TC-00002329 No. A1754-1/7
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